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Correction: Flexible Fullerene Field‐Effect Transistors Fabricated Through Solution Processing
Author(s) -
Sung ChaoFeng,
Kekuda Dhananjay,
Chu Li Fen,
Lee YuhZheng,
Chen FangChung,
Wu MengChyi,
Chu ChihWei
Publication year - 2010
Publication title -
advanced materials
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201090151
Subject(s) - materials science , section (typography) , field (mathematics) , fullerene , field effect transistor , chen , representation (politics) , transistor , engineering physics , optoelectronics , nanotechnology , library science , electrical engineering , computer science , physics , engineering , quantum mechanics , mathematics , political science , voltage , pure mathematics , paleontology , politics , law , biology , operating system