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Quantum Dot Transistors: 1‐Nanometer‐Sized Active‐Channel Molecular Quantum‐Dot Transistor (Adv. Mater. 19/2010)
Author(s) -
Mentovich Elad D.,
Belgorodsky Bogdan,
Kalifa Itsik,
Richter Shachar
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201090067
Subject(s) - transistor , materials science , quantum dot , polaron , hysteresis , nanometre , optoelectronics , nanotechnology , voltage , channel (broadcasting) , condensed matter physics , electrical engineering , physics , quantum mechanics , composite material , engineering , electron
The properties of a molecular quantum dot system using a novel structure of vertical molecular transistor are reported on p. 2182 by Shachar Richter and co‐workers. This C 60 ‐based device can be operated in two new modes: voltage‐controlled switching and gate‐controlled hysteresis. A polaron‐based model is used to explain the operation of the transistor and to introduce some general rules for the construction of polaronic molecular transistors.