Premium
Direct Laser Writing: Direct Laser Writing of Complementary Logic Gates and Lateral p–n Diodes in a Solution‐Processible Monolithic Organic Semiconductor (Adv. Mater. 15/2010)
Author(s) -
Ribierre Jean Charles,
Fujihara Takashi,
Watanabe Satoshi,
Matsumoto Mutsuyoshi,
Muto Tsuyoshi,
Nakao Aiko,
Aoyama Tetsuya
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201090051
Subject(s) - materials science , laser , optoelectronics , diode , organic semiconductor , fabrication , semiconductor , cmos , nanotechnology , optics , medicine , physics , alternative medicine , pathology
Jean‐Charles Ribierre and co‐workers report on the conversion of the majority carrier type by laser irradiation in solution‐processed organic thin films based on a quinoidal oligothiophene derivative ( p. 1722 ). Patterning of p‐type and n‐type microstructures is achieved by direct laser writing and can be visualized using a Kelvin‐probe force microscope. The method is extremely promising for the fabrication of CMOS logic circuits and lateral p‐n diodes based on a monolithic solution‐processible organic semiconductor.