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Organic Memory: Rewritable Switching of One Diode–One Resistor Nonvolatile Organic Memory Devices (Adv. Mater. 11/2010)
Author(s) -
Cho Byungjin,
Kim TaeWook,
Song Sunghoon,
Ji Yongsung,
Jo Minseok,
Hwang Hyunsang,
Jung GunYoung,
Lee Takhee
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201090032
Subject(s) - materials science , resistor , optoelectronics , schottky diode , diode , reading (process) , memory cell , non volatile memory , electrical engineering , transistor , voltage , political science , law , engineering
Takhee Lee and co‐workers demonstrate on p. 1228 that hybrid‐type one‐diode and one‐resistor (1D‐1R) memory devices consisting of inorganic Schottky diodes and organic unipolar memory show electrically rewritable switching characteristics as well as rectifying properties. The 1D‐1R array architecture improves the reading efficiency of the array memory cell, ultimately creating the possibility for high‐density integrated organic memory devices without cross‐talk interference between cells.