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Phase‐Change Memory in Bi 2 Te 3 Nanowires
Author(s) -
Han Nalae,
Kim Sung In,
Yang JeongDo,
Lee Kyumin,
Sohn Hyunchul,
So HyeMi,
Ahn Chi Won,
Yoo KyungHwa
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201004746
Subject(s) - materials science , nanowire , amorphous solid , phase change memory , phase (matter) , phase change , voltage , optoelectronics , nanotechnology , crystallography , engineering physics , electrical engineering , chemistry , organic chemistry , layer (electronics) , engineering
Bi 2 Te 3 nanowires exhibit the phase‐change memory switching behavior. The as‐grown nanowire has a linear current–voltage curve and a crystalline structure. After switching to the high‐resistance state with a voltage pulse, the crystalline phases are partially changed to amorphous phases. This indicates that a crystalline–amorphous phase change in Bi 2 Te 3 nanowires can be induced by a voltage pulse.