Phase‐Change Memory in Bi 2 Te 3  Nanowires | Zendy

Han Nalae | Zendy; Kim Sung In | Zendy; Yang JeongDo | Zendy; Lee Kyumin | Zendy; Sohn Hyunchul | Zendy; So HyeMi | Zendy; Ahn Chi Won | Zendy; Yoo KyungHwa | Zendy

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Phase‐Change Memory in Bi 2 Te 3 Nanowires

Author(s) -

Han Nalae,

Kim Sung In,

Yang JeongDo,

Lee Kyumin,

Sohn Hyunchul,

So HyeMi,

Ahn Chi Won,

Yoo KyungHwa

Publication year - 2011

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201004746

Subject(s) - materials science , nanowire , amorphous solid , phase change memory , phase (matter) , phase change , voltage , optoelectronics , nanotechnology , crystallography , engineering physics , electrical engineering , chemistry , organic chemistry , layer (electronics) , engineering

Bi 2 Te 3 nanowires exhibit the phase‐change memory switching behavior. The as‐grown nanowire has a linear current–voltage curve and a crystalline structure. After switching to the high‐resistance state with a voltage pulse, the crystalline phases are partially changed to amorphous phases. This indicates that a crystalline–amorphous phase change in Bi 2 Te 3 nanowires can be induced by a voltage pulse.

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