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All‐Solution‐Processed, High‐Performance n‐Channel Organic Transistors and Circuits: Toward Low‐Cost Ambient Electronics
Author(s) -
Zhao Yan,
Di Chongan,
Gao Xike,
Hu Yunbin,
Guo Yunlong,
Zhang Lei,
Liu Yunqi,
Wang Jizheng,
Hu Wenping,
Zhu Daoben
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201004588
Subject(s) - transistor , electronics , electronic circuit , channel (broadcasting) , materials science , fabrication , organic electronics , nanotechnology , computer science , optoelectronics , electrical engineering , telecommunications , engineering , voltage , medicine , alternative medicine , pathology
Exploration of high‐performance solution‐processed n‐channel organic transistors with excellent stability is a critical issue for the development of powerful printed circuits. Solution‐processed, bottom‐gate transistors exhibiting a record electron mobility of up to 1.2 cm 2 V −1 s −1 are reported. The devices show excellent stability, which enables the construction of all‐solution‐processed flexible circuits with all fabrication procedures performed in air.