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p‐i‐n Homojunction in Organic Light‐Emitting Transistors
Author(s) -
Bisri Satria Zulkarnaen,
Takenobu Taishi,
Sawabe Kosuke,
Tsuda Satoshi,
Yomogida Yohei,
Yamao Takeshi,
Hotta Shu,
Adachi Chihaya,
Iwasa Yoshihiro
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201004572
Subject(s) - homojunction , ambipolar diffusion , materials science , optoelectronics , transistor , organic field effect transistor , light emission , organic semiconductor , field effect transistor , doping , electron , electrical engineering , physics , voltage , quantum mechanics , engineering
A new method for investigating light‐emitting property in organic devices is demonstrated. We apply the ambipolar light‐emitting transistors (LETs) to directly observe the recombination zone, and find a strong link between the transistor performance and the zone size. This finding unambiguously indicates that the light emission comes from the electric‐field‐induced p‐i‐n homojunction in ambipolar LETs.