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A Resistive Memory in Semiconducting BiFeO 3 Thin‐Film Capacitors
Author(s) -
Jiang An Quan,
Wang Can,
Jin Kui Juan,
Liu Xiao Bing,
Scott James F.,
Hwang Cheol Seong,
Tang Ting Ao,
Lu Hui Bin,
Yang Guo Zhen
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201004317
Subject(s) - materials science , capacitor , optoelectronics , ferroelectricity , non volatile memory , thin film , diode , resistive random access memory , resistive touchscreen , ferroelectric capacitor , semiconductor , polarization (electrochemistry) , nanotechnology , electrical engineering , dielectric , voltage , chemistry , engineering
A ferroelectric‐resistive random access memory consisting of a conductive BiFeO 3 epitaxial thin film with a unipolar diode current modulated by electric polarization orientation is reported. This device has a memory that lasts for months, a sufficiently high on current and on/off ratio to permit ordinary sense amplifiers to measure “1” or “0”, and is fully compatible with complementary metal‐oxide semiconductor processing.