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Top‐Gate Organic Field‐Effect Transistors with High Environmental and Operational Stability
Author(s) -
Hwang Do Kyung,
FuentesHernandez Canek,
Kim Jungbae,
Potscavage William J.,
Kim SungJin,
Kippelen Bernard
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201004278
Subject(s) - materials science , transistor , optoelectronics , field effect transistor , organic field effect transistor , organic semiconductor , semiconductor , nanotechnology , voltage , electrical engineering , engineering
Top‐gate organic field‐effect transistors are demonstrated using a bilayer gate dielectric to propose a new compensation mechanism which leads to high operational stability. Neither changes in mobility nor threshold voltage changes are observed after 20 000 cycles of the transfer characteristics or after 24 hours under constant direct‐current bias stress. We also demonstrate that these OFETs are air stable up to 210 days.