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Gate‐Tunable Surface Processes on a Single‐Nanowire Field‐Effect Transistor
Author(s) -
Mubeen Syed,
Moskovits Martin
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201004203
Subject(s) - nanowire , materials science , transistor , field effect transistor , nanotechnology , gate oxide , oxide , dielectric , optoelectronics , gate dielectric , field (mathematics) , surface (topology) , channel (broadcasting) , high κ dielectric , electrical engineering , engineering , voltage , geometry , mathematics , pure mathematics , metallurgy
Surface chemical processes occurring on a Pd‐nanoparticle‐decorated tin oxide (SnO 2 ) nanowire configured as a field‐effect transistor (FET) can be strongly influenced by the gate potential if a high dielectric constant material is used as the gate oxide. Dramatic changes in channel currents are produced as a consequence when the device is exposed to hydrogen while operated in its depletion region, providing an example of gate‐potential directed surface chemistry.