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Reinforced Self‐Assembled Nanodielectrics for High‐Performance Transparent Thin Film Transistors
Author(s) -
Liu Jun,
Hennek Jonathan W.,
Buchholz D. Bruce,
Ha Younggeun,
Xie Sujing,
Dravid Vinayak P.,
Chang Robert P. H.,
Facchetti Antonio,
Marks Tobin J.
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201004198
Subject(s) - materials science , thin film transistor , semiconductor , amorphous solid , durability , dielectric , thin film , optoelectronics , layer (electronics) , capacitance , composite material , nanotechnology , electrode , chemistry , organic chemistry
Reinforced self‐assembled nano‐dielectrics (R‐SANDs) are fabricated by depositing a thin protective layer on high‐capacitance SAND films, thus significantly improving SAND durability and expanding SAND compatibility with a broader range of semiconductor deposition techniques. Fully transparent TFTs with excellent field‐effect mobilities ∼140 cm 2 /V·s and low operating voltages ∼1.0 V are demonstrated by combining the R‐SAND and an amorphous Zn‐In‐Sn‐O transparent oxide semiconductor.