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Reduced Graphene Oxide Electrodes for Large Area Organic Electronics
Author(s) -
Wöbkenberg Paul H.,
Eda Goki,
Leem DongSeok,
de Mello John C.,
Bradley Donal D. C.,
Chhowalla Manish,
Anthopoulos Thomas D.
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201004161
Subject(s) - materials science , graphene , fabrication , electrode , nanotechnology , thin film transistor , organic electronics , electronics , oxide , transistor , electrical conductor , lithography , electronic circuit , optoelectronics , printed electronics , flexible electronics , electrical engineering , composite material , voltage , layer (electronics) , chemistry , engineering , metallurgy , medicine , alternative medicine , pathology , inkwell
Interlayer lithography is used to pattern highly conductive, solution‐processed, reduced graphene oxide source and drain electrodes down to 10 μm gaps. These patterned electrodes allow for the fabrication of high‐performance organic thin‐film transistors and complementary circuits. The method offers a viable route towards organic electronics fabricated entirely by solution processing.