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Multilevel Data Storage Memory Devices Based on the Controlled Capacitive Coupling of Trapped Electrons
Author(s) -
Lee JangSik,
Kim YongMu,
Kwon JeongHwa,
Sim Jae Sung,
Shin Hyunjung,
Sohn ByeongHyeok,
Jia Quanxi
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201004150
Subject(s) - capacitive sensing , capacitive coupling , materials science , coupling (piping) , computer data storage , nanoparticle , electron , nanotechnology , trapping , non volatile memory , optoelectronics , nanometre , voltage , computer science , computer hardware , electrical engineering , physics , engineering , ecology , composite material , quantum mechanics , metallurgy , biology , operating system
Multiple data storage memory devices based on the controlled capacitive coupling of trapped electrons are fabricated using highly ordered arrays of metal nanoparticles. Results are presented from metal nanoparticle‐based memory devices with controlled nanoparticle charge trapping elements, which undergo gate‐voltage‐adjustable multilevel memory states. Experimental and theoretical analysis for multilevel data manipulations and visualization of memory states are done on the nanometer scale.