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Atomic‐Scale Evolution of Local Electronic Structure Across Multiferroic Domain Walls
Author(s) -
Chiu YaPing,
Chen YuTing,
Huang BoChao,
Shih MinChuan,
Yang JanChi,
He Qing,
Liang ChenWei,
Seidel Jan,
Chen YiChun,
Ramesh Ramamoorthy,
Chu YingHao
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201004143
Subject(s) - domain (mathematical analysis) , multiferroics , materials science , scale (ratio) , domain wall (magnetism) , scanning tunneling microscope , quantum tunnelling , atomic units , electronic structure , band gap , nanotechnology , crystallography , condensed matter physics , optoelectronics , physics , ferroelectricity , chemistry , quantum mechanics , mathematical analysis , mathematics , magnetization , magnetic field , dielectric
Direct evidence of the electronic configurations across domain walls in BiFeO 3 is quantitatively characterized by cross‐sectional scanning tunneling microscopy. Atomic‐scale band evolution and the asymmetrically built‐in potential barrier at domain boundaries are demonstrated. The 109° domain walls register a remarkable decrease in the bandgap, suggesting a new route to control the local conducting channels within 2 nm.