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Optoelectronic Gate Dielectrics for High Brightness and High‐Efficiency Light‐Emitting Transistors
Author(s) -
Namdas Ebinazar B.,
Hsu Ben B.Y.,
Yuen Jonathan D.,
Samuel Ifor D. W.,
Heeger Alan J.
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201004102
Subject(s) - optoelectronics , materials science , transistor , dielectric , brightness , voltage , electrical engineering , optics , physics , engineering
The optoelectronic gate light‐emitting field‐effect transistor (OEG LEFET) containing alternate SiO 2 and SiN x dielectric stacks allows enhanced light emission for a designed spectrum range and provides reliable strength for a wide operating voltage. The device can improve the emission efficiency by 4.5 times in comparison to a reference LEFET with a SiN x gate dielectric and can reach a brightness as high as 4500 cd/m 2 .