Optoelectronic Gate Dielectrics for High Brightness and High‐Efficiency Light‐Emitting Transistors | Zendy

Namdas Ebinazar B. | Zendy; Hsu Ben B.Y. | Zendy; Yuen Jonathan D. | Zendy; Samuel Ifor D. W. | Zendy; Heeger Alan J. | Zendy

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Optoelectronic Gate Dielectrics for High Brightness and High‐Efficiency Light‐Emitting Transistors

Author(s) -

Namdas Ebinazar B.,

Hsu Ben B.Y.,

Yuen Jonathan D.,

Samuel Ifor D. W.,

Heeger Alan J.

Publication year - 2011

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201004102

Subject(s) - optoelectronics , materials science , transistor , dielectric , brightness , voltage , electrical engineering , optics , physics , engineering

The optoelectronic gate light‐emitting field‐effect transistor (OEG LEFET) containing alternate SiO 2 and SiN x dielectric stacks allows enhanced light emission for a designed spectrum range and provides reliable strength for a wide operating voltage. The device can improve the emission efficiency by 4.5 times in comparison to a reference LEFET with a SiN x gate dielectric and can reach a brightness as high as 4500 cd/m 2 .

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