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Flexible Organic Thin‐Film Transistors with Silk Fibroin as the Gate Dielectric
Author(s) -
Wang ChungHwa,
Hsieh ChaoYing,
Hwang JennChang
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201004071
Subject(s) - fibroin , pentacene , materials science , thin film transistor , gate dielectric , organic electronics , silk , dielectric , transistor , optoelectronics , electronics , thin film , nanotechnology , voltage , composite material , electrical engineering , layer (electronics) , engineering
Silk fibroin, one of the silk proteins produced by the silk work, is shown to be an excellent gate dielectric material for pentacene organic thin‐film transistors (OTFTs). The pentacene OTFT described exhibits a very high field‐effect mobility value of 23.2 cm 2 V −1 s −1 and a low operating voltage of –3 V. This, combined with its advantages of low cost and light weight, confers on it great potential for high‐speed flexible electronics applications.