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On‐Nanowire Band‐Graded Si:Ge Photodetectors
Author(s) -
Kim CheolJoo,
Lee HyunSeung,
Cho YongJun,
Yang JeeEun,
Lee Ru Ri,
Lee Ja Kyung,
Jo MoonHo
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201004034
Subject(s) - photodetector , nanowire , photocurrent , materials science , optoelectronics , band gap , gradation , computer science , computer vision
An on‐nanowire (on‐NW) band‐graded photodetector that pertains to the on‐nanowire composition gradation from pure Si to pure Ge , Si 1– x Ge x (0 ≤ x ≤ 1), is reported. The spectral onset of interband photocarrier generation and photocurrent amplitude are on‐NW de‐multiflexed over the continuously varying energy band gap and surface trap state density in an individually addressable manner.