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High‐Mobility Low‐Voltage ZnO and Li‐Doped ZnO Transistors Based on ZrO 2 High‐ k Dielectric Grown by Spray Pyrolysis in Ambient Air
Author(s) -
Adamopoulos George,
Thomas Stuart,
Wöbkenberg Paul H.,
Bradley Donal D. C.,
McLachlan Martyn A.,
Anthopoulos Thomas D.
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201003935
Subject(s) - materials science , doping , optoelectronics , dielectric , electrode , thin film transistor , transistor , semiconductor , indium tin oxide , indium , electron mobility , chemical engineering , analytical chemistry (journal) , thin film , nanotechnology , voltage , layer (electronics) , electrical engineering , organic chemistry , chemistry , engineering
Sequential layers of the high‐ k dielectric ZrO 2 and the electron transporting semiconductors ZnO and Li‐doped ZnO are deposited onto conductive indium tin oxide electrodes using spray pyrolysis. With these structures, thin‐film transistors are fabricated with operating voltages below 6 V and maximum electron mobilities on the order of 85 cm 2 V −1 s −1 .