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Molecular Beam Epitaxial Growth of Topological Insulators
Author(s) -
Chen Xi,
Ma XuCun,
He Ke,
Jia JinFeng,
Xue QiKun
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201003855
Subject(s) - topological insulator , molecular beam epitaxy , materials science , scanning tunneling microscope , photoemission spectroscopy , epitaxy , graphene , thin film , topology (electrical circuits) , surface states , optoelectronics , layer (electronics) , condensed matter physics , nanotechnology , x ray photoelectron spectroscopy , surface (topology) , physics , nuclear magnetic resonance , mathematics , geometry , combinatorics
With the molecular beam epitaxy technique, layer‐by‐layer growth of atomically flat topological insulator Bi 2 Te 3 and Bi 2 Se 3 thin films has been realized on Si(111) and graphene substrates, respectively. The growth criteria by which intrinsic topological insulators can readily be obtained is established. By using in situ angle‐resolved photoemission spectroscopy and scanning tunneling microscopy measurements, the band structure and surface morphology of Bi 2 Te 3 and Bi 2 Se 3 thin films of different thickness can be studied. Molecular beam epitaxy technique was shown to not only provide an excellent method to prepare high quality topological insulators but show possibilities of engineering their electronic and spin structures as well, which is of significant importance for potential applications of topological insulators based on well‐developed Si technology.