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Excitonic Properties and Near‐Infrared Coherent Random Lasing in Vertically Aligned CdSe Nanowires
Author(s) -
Chen Rui,
Bakti Utama Muhammad Iqbal,
Peng Zeping,
Peng Bo,
Xiong Qihua,
Sun Handong
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201003820
Subject(s) - lasing threshold , materials science , nanowire , exciton , optoelectronics , infrared , random laser , absorption (acoustics) , excitation , whispering gallery wave , photoluminescence , nanotechnology , optics , condensed matter physics , physics , wavelength , quantum mechanics , composite material , resonator
High‐quality , vertically aligned CdSe nanowires (figure, top left) are prepared by the vapor transport growth technique. Strong free‐exciton absorption and emission are observed (top right) and, under optical excitation, near‐infrared coherent random lasing is demonstrated for the first time from CdSe nanowires at room temperature (bottom). The results show that this material system holds promise for optoelectronic applications.