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Memory Effect in Magnetic Nanowire Arrays
Author(s) -
Kou Xiaoming,
Fan Xin,
Dumas Randy K.,
Lu Qi,
Zhang Yaping,
Zhu Hao,
Zhang Xiaokai,
Liu Kai,
Xiao John Q.
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201003749
Subject(s) - nanowire , materials science , magnetic memory , magnetic field , dipole , condensed matter physics , nanotechnology , magnetic dipole , optoelectronics , layer (electronics) , physics , quantum mechanics
A memory effect has been demonstrated in magnetic nanowire arrays. The magnetic nanowire array has the ability to record the maximum magnetic field that the array has been exposed to after the field has been turned off. The origin of the memory effect is the strong magnetic dipole interaction among the nanowires. Switching field distributions among nanowires has been studied with a first‐order reversal curve technique to elucidate the discrepancy between the experimental result and the theoretical explanation. Based on the memory effect, a novel and extremely low cost EMP detection scheme is proposed.