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The Nature of Polarization Fatigue in BiFeO 3
Author(s) -
Baek SeungHyub,
Folkman Chad M.,
Park JaeWan,
Lee Sanghan,
Bark ChungWung,
Tybell Thomas,
Eom ChangBeom
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201003612
Subject(s) - ferroelectricity , polarization (electrochemistry) , materials science , epitaxy , path (computing) , fatigue testing , domain (mathematical analysis) , condensed matter physics , optoelectronics , composite material , computer science , physics , mathematics , computer network , chemistry , layer (electronics) , dielectric , mathematical analysis
The Nature of polarization fatigue in BiFeO 3 was revealed using monodomain epitaxial thin films with different orientations. We have found that the fatigue strongly depends on switching path. Fatigue‐free behavior is demonstrated in ferroelastic switching (71° and 109°). In contrast, a significant polarization fatigue occurs in ferroelectric switching (180°) which involves multiple switching paths and formation of charged domain walls that effectively pin domain walls and hence reduce the total switched volume.