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Growth of Directly Transferable In 2 O 3 Nanowire Mats for Transparent Thin‐film Transistor Applications
Author(s) -
Shen Guozhen,
Xu Jing,
Wang Xianfu,
Huang Hongtao,
Chen Di
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201003474
Subject(s) - nanowire , materials science , nanotechnology , transistor , thin film transistor , thin film , chemical vapor deposition , deposition (geology) , simple (philosophy) , laser ablation , optoelectronics , laser , layer (electronics) , optics , electrical engineering , physics , paleontology , voltage , sediment , biology , engineering , philosophy , epistemology
Peeling off nanowire mats with tweezers? Directly transferable In 2 O 3 nanowire mats are synthesized via a simple laser‐ablation chemical vapor deposition method (see figure). The mats are used as active channels to make transparent thin‐film transistors with high performance.