Fundamental Limits on the Mobility of Nanotube‐Based Semiconducting Inks | Zendy

Rouhi Nima | Zendy; Jain Dheeraj | Zendy; Zand Katayoun | Zendy; Burke Peter John | Zendy

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Fundamental Limits on the Mobility of Nanotube‐Based Semiconducting Inks

Author(s) -

Rouhi Nima,

Jain Dheeraj,

Zand Katayoun,

Burke Peter John

Publication year - 2011

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201003281

Subject(s) - carbon nanotube , materials science , nanotechnology , transistor , electron mobility , thin film transistor , deposition (geology) , content (measure theory) , nanotube , optoelectronics , physics , paleontology , mathematical analysis , mathematics , layer (electronics) , voltage , sediment , biology , quantum mechanics

High mobility and high on/off ratio thin‐film transistors are fabricated using solution‐based deposition of purified semiconducting carbon nanotubes. A comprehensive spectrum of the density starting from less than 10 tubes μm −2 to the high end of around 100 tubes μm −2 is investigated. This study provides the first important roadmap for the tradeoffs between mobility and on/off ratio in nanotube‐based semiconducting inks.

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