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Fundamental Limits on the Mobility of Nanotube‐Based Semiconducting Inks
Author(s) -
Rouhi Nima,
Jain Dheeraj,
Zand Katayoun,
Burke Peter John
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201003281
Subject(s) - carbon nanotube , materials science , nanotechnology , transistor , electron mobility , thin film transistor , deposition (geology) , content (measure theory) , nanotube , optoelectronics , physics , paleontology , mathematical analysis , mathematics , layer (electronics) , voltage , sediment , biology , quantum mechanics
High mobility and high on/off ratio thin‐film transistors are fabricated using solution‐based deposition of purified semiconducting carbon nanotubes. A comprehensive spectrum of the density starting from less than 10 tubes μm −2 to the high end of around 100 tubes μm −2 is investigated. This study provides the first important roadmap for the tradeoffs between mobility and on/off ratio in nanotube‐based semiconducting inks.