Low‐Power High‐Performance Non‐Volatile Memory on a Flexible Substrate with Excellent Endurance | Zendy

Cheng ChunHu | Zendy; Yeh FonShan | Zendy; Chin Albert | Zendy

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Low‐Power High‐Performance Non‐Volatile Memory on a Flexible Substrate with Excellent Endurance

Author(s) -

Cheng ChunHu,

Yeh FonShan,

Chin Albert

Publication year - 2011

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201002946

Subject(s) - materials science , non volatile memory , resistive random access memory , substrate (aquarium) , dielectric , optoelectronics , reset (finance) , data retention , high κ dielectric , electrode , oceanography , financial economics , economics , geology , chemistry

Very high performance Ni/GeO x /HfON/TaN non‐volatile resistive memory is fabricated using the covalently bonded dielectric GeO x and metal oxynitride HfON as well as low cost electrodes. The device shows low set and reset powers, good 85 °C retention, and 10 5 endurance, which are near to the characteristics of existing commercial flash memory.

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