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Tuning the Threshold Voltage in Organic Thin‐Film Transistors by Local Channel Doping Using Photoreactive Interfacial Layers
Author(s) -
Marchl Marco,
Edler Matthias,
Haase Anja,
Fian Alexander,
Trimmel Gregor,
Griesser Thomas,
Stadlober Barbara,
Zojer Egbert
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201002912
Subject(s) - materials science , threshold voltage , thin film transistor , transistor , optoelectronics , electronic circuit , inverter , voltage , layer (electronics) , nanotechnology , electronic engineering , electrical engineering , engineering
The insertion of a thin photoacid generator layer between the dielectric and the active layer in organic thin‐film transistors (OTFTs) allows control of the threshold voltage through UV illumination by means of interfacial channel doping. All p‐type organic inverters can be realized by combining an OTFT working in depletion mode and one operating in enhancement mode.