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Enabling Strategies in Organic Electronics Using Ordered Block Copolymer Nanostructures
Author(s) -
Rosa Claudio De,
Auriemma Finizia,
Girolamo Rocco Di,
Pepe Giovanni Piero,
Napolitano Teresa,
Scaldaferri Rossana
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201002649
Subject(s) - materials science , copolymer , nanostructure , nanotechnology , lithography , silicon , electronics , nanoparticle , block (permutation group theory) , optoelectronics , polymer , electrical engineering , geometry , mathematics , engineering , composite material
Memory devices with high bit density and memory cells just 50–60 nm apart and a density of 10 10 cm −2 – which is not achievable with the current silicon‐based lithographic techniques – are fabricated using a self‐assembled block‐copolymer ordered nanostructure and selectively sequestered gold nanoparticles . This result brings the idea of molecular memories a step closer to reality.