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Three‐Dimensional Integration of Organic Resistive Memory Devices
Author(s) -
Song Sunghoon,
Cho Byungjin,
Kim TaeWook,
Ji Yongsung,
Jo Minseok,
Wang Gunuk,
Choe Minhyeok,
Kahng Yung Ho,
Hwang Hyunsang,
Lee Takhee
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201002575
Subject(s) - materials science , resistive touchscreen , electronics , organic electronics , optoelectronics , organic molecules , non volatile memory , integrable system , computer science , nanotechnology , computer hardware , electrical engineering , computer vision , voltage , molecule , transistor , physics , engineering , quantum mechanics , mathematical physics
Organic memory : Our three‐dimensionally (3D) stacked 8 × 8 cross‐bar array organic resistive memory devices showed non‐volatile memory switching behavior, in which individual memory cells in the different layers can be independently controlled and monitored. The 3D stackable organic memory devices will enable achieving highly integrable organic memory devices and other organic‐based electronics with much increased cell density.