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Highly Stable Transparent Amorphous Oxide Semiconductor Thin‐Film Transistors Having Double‐Stacked Active Layers
Author(s) -
Park Jae Chul,
Kim Sangwook,
Kim Sunil,
Kim Changjung,
Song Ihun,
Park Youngsoo,
Jung UIn,
Kim Dae Hwan,
Lee JangSik
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201002397
Subject(s) - materials science , thin film transistor , transistor , optoelectronics , amorphous solid , semiconductor , oxide , thin film , nanotechnology , layer (electronics) , electrical engineering , crystallography , metallurgy , chemistry , engineering , voltage
A novel device structure is presented for amorphous oxide semiconductor thin‐film transistors with high performance as well as improved electrical/optical stress stability. The highly stable transistor devices are developed using composition‐modulated dual active layers. This approach could potentially be used to fabricate product‐level display devices using amorphous oxide semiconductors in the near future.