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Thin Film Field‐Effect Phototransistors from Bandgap‐Tunable, Solution‐Processed, Few‐Layer Reduced Graphene Oxide Films
Author(s) -
Chang Haixin,
Sun Zhenhua,
Yuan Qinghong,
Ding Feng,
Tao Xiaoming,
Yan Feng,
Zheng Zijian
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201002229
Subject(s) - materials science , graphene , band gap , photodetection , optoelectronics , thin film , layer (electronics) , spin coating , oxide , field effect , photodiode , nanotechnology , photodetector , metallurgy
Thin film field‐effect phototransistors (FETs) can be developed from bandgap‐tunable, solution‐processed, few‐layer reduced graphene oxide (FRGO) films. Large‐area FRGO films with tunable bandgaps ranging from 2.2 eV to 0.5 eV can be achieved readily by solution‐processing technique such as spin‐coating. The electronic and optoelectronic properties of FRGO FETs are found to be closely related to their bandgap energy. The resulting phototransistor has great application potential in the field of photodetection.