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All‐Manganite Tunnel Junctions with Interface‐Induced Barrier Magnetism
Author(s) -
Sefrioui Z.,
Visani C.,
Calderón M. J.,
March K.,
Carrétéro C.,
Walls M.,
RiveraCalzada A.,
León C.,
Anton R. Lopez,
Charlton T. R.,
Cuellar F. A.,
Iborra E.,
Ott F.,
Imhoff D.,
Brey L.,
Bibes M.,
Santamaria J.,
Barthélémy A.
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201002067
Subject(s) - manganite , antiferromagnetism , condensed matter physics , materials science , heterojunction , magnetism , tunnel magnetoresistance , interface (matter) , exchange bias , spin (aerodynamics) , magnetic moment , epitaxy , ferromagnetism , nanotechnology , physics , magnetic anisotropy , composite material , magnetization , layer (electronics) , capillary number , quantum mechanics , capillary action , magnetic field , thermodynamics
In epitaxial heterostructures combining strongly correlated manganese oxides with antiferromagnetic‐insulator or half‐metallic character, a large interfacial moment is found and used to produce a spin‐filter‐like behavior in all‐manganite tunnel junctions. The results suggest that after playing a key role in exchange‐bias for spin‐valves, uncompensated moments at engineered antiferromagnetic interfaces represent a novel route for generating highly spin‐polarized currents with antiferromagnets.