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Electrically Tunable Optical Switching of a Mott Insulator–Band Insulator Interface
Author(s) -
Rastogi A.,
Kushwaha A. K.,
Shiyani T.,
Gangawar A.,
Budhani R. C.
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201001980
Subject(s) - materials science , optoelectronics , epitaxy , insulator (electricity) , conductivity , polarity (international relations) , mott insulator , realization (probability) , electrical resistivity and conductivity , electric field , voltage , heterojunction , interface (matter) , excitation , metal–insulator transition , nanotechnology , condensed matter physics , electrical engineering , metal , composite material , mathematics , chemistry , cell , engineering , genetics , biology , layer (electronics) , quantum mechanics , statistics , physics , capillary number , capillary action , metallurgy
The electrical conductivity of the two‐dimensional (2D) electron gas at the interface of epitaxially grown ultrathin films of LaTiO 3 on SrTiO 3 shows a large gain upon near‐UV excitation. The gain in conductivity can be turned on or off by the application of a gate voltage of correct polarity. This feature of the 2D gas should allow realization of optoelectronic devices whose functionality can be enhanced by sequential application of an electric field and light.