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Coexistence of Filamentary and Homogeneous Resistive Switching in Fe‐Doped SrTiO 3 Thin‐Film Memristive Devices
Author(s) -
Muenstermann Ruth,
Menke Tobias,
Dittmann Regina,
Waser Rainer
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201001872
Subject(s) - materials science , doping , homogeneous , thin film , resistive touchscreen , electrode , electrical conductor , optoelectronics , nanotechnology , insulator (electricity) , resistive random access memory , computer science , composite material , physics , quantum mechanics , computer vision , thermodynamics
Conductive atomic force microscopy combined with a delamination technique is used to remove the top electrode of Fe‐doped SrTiO 3 metal–insulator–metal structures and gain insight into the active switching interface. Both a filamentary and an area‐dependent switching process with opposite switching polarities are found in the same sample.