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Low‐Temperature Processable Organic‐Inorganic Hybrid Gate Dielectrics for Solution‐Based Organic Field‐Effect Transistors
Author(s) -
Nagase Takashi,
Hamada Takashi,
Tomatsu Kenji,
Yamazaki Saori,
Kobayashi Takashi,
Murakami Shuichi,
Matsukawa Kimihiro,
Naito Hiroyoshi
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201001871
Subject(s) - materials science , silsesquioxane , silanol , dielectric , gate dielectric , field effect transistor , organic field effect transistor , hysteresis , transistor , optoelectronics , chemical engineering , polymer , organic chemistry , composite material , catalysis , electrical engineering , chemistry , physics , quantum mechanics , voltage , engineering
Organic‐inorganic hybrid poly(methyl silsesquioxane) with a low curing temperature of 150 °C synthesized by a sol‐gel method is employed as a gate dielectric for solution‐based organic field‐effect transistors. The device exhibits mobility enhancement, compared with those with SiO 2 dielectrics, and hysteresis‐free, high stable operation, which is attributed to extremely low concentration of silanol groups of the poly(methyl silsesquioxane) dielectric.