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Revealing Buried Interfaces to Understand the Origins of Threshold Voltage Shifts in Organic Field‐Effect Transistors
Author(s) -
Mathijssen Simon G. J.,
Spijkman MarkJan,
Andringa AnneMarije,
van Hal Paul A.,
McCulloch Iain,
Kemerink Martijn,
Janssen René A. J.,
de Leeuw Dago M.
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201001865
Subject(s) - materials science , gate dielectric , dielectric , optoelectronics , organic field effect transistor , transistor , threshold voltage , organic semiconductor , semiconductor , field effect transistor , kelvin probe force microscope , characterization (materials science) , voltage , nanotechnology , electrical engineering , atomic force microscopy , engineering
The semiconductor of an organic field‐effect transistor is stripped with adhesive tape, yielding an exposed gate dielectric, accessible for various characterization techniques. By using scanning Kelvin probe microscopy we reveal that trapped charges after gate bias stress are located at the gate dielectric and not in the semiconductor. Charging of the gate dielectric is confirmed by the fact that the threshold voltage shift remains, when a pristine organic semiconductor is deposited on the exposed gate dielectric of a stressed and delaminated field‐effect transistor.