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Device Configurations for Ambipolar Transport in Flexible, Pentacene Transistors
Author(s) -
Saudari Sangameshwar Rao,
Lin Yu Jen,
Lai Yuming,
Kagan Cherie R.
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201001853
Subject(s) - ambipolar diffusion , pentacene , materials science , monolayer , parylene , transistor , optoelectronics , dielectric , electrode , self assembled monolayer , gate dielectric , cmos , thin film transistor , nanotechnology , electron , electrical engineering , polymer , voltage , layer (electronics) , composite material , chemistry , engineering , quantum mechanics , physics
Ambipolar pentacene transistors in bottom contact‐bottom gate geometry are fabricated on flexible substrates using parylene as a dielectric and self‐assembled monolayer treatment of the source‐drain electrodes to improve charge injection. Hole and electron mobilities of 0.07‐0.1 cm 2 V −1 s −1 and 0.01‐0.04 cm 2 V −1 s −1 are achieved. CMOS like inverters are built and gains of up to 110 are reported.