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Split‐Gate Organic Field Effect Transistors: Control Over Charge Injection and Transport
Author(s) -
Hsu Ben B. Y.,
Namdas Ebinazar B.,
Yuen Jonathan D.,
Cho Shinuk,
Samuel Ifor D.W.,
Heeger Alan J.
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201001509
Subject(s) - materials science , transistor , field effect transistor , optoelectronics , polarity (international relations) , diode , charge (physics) , electrode , electrical engineering , voltage , physics , engineering , chemistry , biochemistry , quantum mechanics , cell
A split‐gate field effect transistor containing four electrodes, source, drain, two gates allows enhanced transport for specific carrier species and separate control of carrier polarity over two gate regimes. The device can be operated as a transistor or a diode by controlling gate biases.