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Single ZnO Nanowire/p‐type GaN Heterojunctions for Photovoltaic Devices and UV Light‐Emitting Diodes
Author(s) -
Bie YaQing,
Liao ZhiMin,
Wang PengWei,
Zhou YangBo,
Han XiaoBing,
Ye Yu,
Zhao Qing,
Wu XiaoSong,
Dai Lun,
Xu Jun,
Sang LiWen,
Deng JunJing,
Laurent K.,
LeprinceWang Y.,
Yu DaPeng
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201000985
Subject(s) - materials science , heterojunction , optoelectronics , electroluminescence , nanowire , diode , light emitting diode , photovoltaic system , open circuit voltage , voltage , nanotechnology , layer (electronics) , electrical engineering , engineering
We fabricate heterojunctions consisting of a single n‐type ZnO nanowire and a p‐type GaN film. The photovoltaic effect of heterojunctions exhibits open‐circuit voltages ranging from 2 to 2.7 V, and a maximum output power reaching 80 nW. Light‐emitting diodes with UV electroluminescence based on the heterojunctions are demonstrated.