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The Materials Challenge in Diffraction‐Unlimited Direct‐Laser‐Writing Optical Lithography
Author(s) -
Fischer Joachim,
von Freymann Georg,
Wegener Martin
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201000892
Subject(s) - materials science , photoresist , lithography , optoelectronics , absorption (acoustics) , laser , optics , excitation , diffraction , two photon excitation microscopy , nanotechnology , fluorescence , physics , layer (electronics) , electrical engineering , engineering , composite material
Using a novel photoresist (composed of pentaerythritol triacrylate and isopropyl thioxanthone) that favors stimulated emission depletion by a π‐π * transition and using a two‐color two‐photon excitation scheme, 65‐nm wide lines are achieved. This value is limited by parasitic two‐photon absorption of the continuous‐wave depletion beam. It is estimated that, without this process, line widths of 30 nm are in reach.