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High‐Speed Spatial Atomic‐Layer Deposition of Aluminum Oxide Layers for Solar Cell Passivation
Author(s) -
Poodt Paul,
Lankhorst Adriaan,
Roozeboom Fred,
Spee Karel,
Maas Diederik,
Vermeer Ad
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201000766
Subject(s) - passivation , materials science , atomic layer deposition , aluminum oxide , layer (electronics) , deposition (geology) , aluminium , solar cell , optoelectronics , thin film , oxide , nanotechnology , chemical engineering , composite material , metallurgy , paleontology , sediment , engineering , biology
Al 2 O 3 thin films deposited at rates as high as 1.2 nm s −1 using spatially separated atomic layer deposition show excellent solar cell surface passivation properties, i.e., recombination velocities of <2 cm s −1 . This disruptive ALD concept opens the way for cost‐effective manufacturing with high industrial throughput numbers.