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Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE)
Author(s) -
Park Jeongho,
Mitchel William C.,
Grazulis Lawrence,
Smith Howard E.,
Eyink Kurt G.,
Boeckl John J.,
Tomich David H.,
Pacley Shanee D.,
Hoelscher John. E.
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201000756
Subject(s) - graphene , materials science , molecular beam epitaxy , epitaxy , carbon fibers , graphite , nanotechnology , optoelectronics , composite material , composite number , layer (electronics)
A novel growth method (carbon molecular beam epitaxy (CMBE)) has been developed to produce high‐quality and large‐area epitaxial graphene. This method demonstrates significantly improved controllability of the graphene growth. CMBE with C 60 produces AB stacked graphene, while growth with the graphite filament results in non‐Bernal stacked graphene layers with a Dirac‐like electronic structure, which is similar to graphene grown by thermal decomposition on SiC (000‐1).