Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE) | Zendy

Park Jeongho | Zendy; Mitchel William C. | Zendy; Grazulis Lawrence | Zendy; Smith Howard E. | Zendy; Eyink Kurt G. | Zendy; Boeckl John J. | Zendy; Tomich David H. | Zendy; Pacley Shanee D. | Zendy; Hoelscher John. E. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE)

Author(s) -

Park Jeongho,

Mitchel William C.,

Grazulis Lawrence,

Smith Howard E.,

Eyink Kurt G.,

Boeckl John J.,

Tomich David H.,

Pacley Shanee D.,

Hoelscher John. E.

Publication year - 2010

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201000756

Subject(s) - graphene , materials science , molecular beam epitaxy , epitaxy , carbon fibers , graphite , nanotechnology , optoelectronics , composite material , composite number , layer (electronics)

A novel growth method (carbon molecular beam epitaxy (CMBE)) has been developed to produce high‐quality and large‐area epitaxial graphene. This method demonstrates significantly improved controllability of the graphene growth. CMBE with C 60 produces AB stacked graphene, while growth with the graphite filament results in non‐Bernal stacked graphene layers with a Dirac‐like electronic structure, which is similar to graphene grown by thermal decomposition on SiC (000‐1).

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research