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Interfacial Trap Density‐of‐States in Pentacene‐ and ZnO‐Based Thin‐Film Transistors Measured via Novel Photo‐excited Charge‐Collection Spectroscopy
Author(s) -
Lee Kimoon,
Oh Min Suk,
Mun Sungjin,
Lee Kwang H.,
Ha Tae Woo,
Kim Jae Hoon,
Park SangHee Ko,
Hwang ChiSun,
Lee Byoung H.,
Sung Myung M.,
Im Seongil
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201000722
Subject(s) - pentacene , materials science , excited state , optoelectronics , spectroscopy , thin film transistor , transistor , trap (plumbing) , charge (physics) , nanotechnology , atomic physics , voltage , electrical engineering , physics , layer (electronics) , quantum mechanics , engineering , environmental engineering
Direct quantitative mapping of the density‐of‐states , named the photo‐excited charge‐collection technique, for the interface traps at the n‐ZnO and/or p‐pentacene thin‐film transistor channel is implemented by using monochromatic photons which are carried by optical fibers and are probed onto thin‐film transistors.