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Diffusion of Adhesion Layer Metals Controls Nanoscale Memristive Switching
Author(s) -
Yang J. Joshua,
Strachan John Paul,
Xia Qiangfei,
Ohlberg Douglas A. A.,
Kuekes Philip J.,
Kelley Ronald D.,
Stickle William F.,
Stewart Duncan R.,
MedeirosRibeiro Gilberto,
Williams R. Stanley
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201000663
Subject(s) - materials science , nanoscopic scale , high resolution transmission electron microscopy , electrode , atom probe , diffusion , nanotechnology , layer (electronics) , grain boundary , thermal oxidation , grain size , optoelectronics , chemical engineering , transmission electron microscopy , composite material , microstructure , physics , thermodynamics , chemistry , engineering
Thermal diffusion of Ti through Pt electrode forms Ti atom channels of 1 nm diameter along Pt grain boundaries, seeding switching centers and controlling nanoscale memristive switching. The image shows EFTEM maps of Ti overlaid on HRTEM images for a Si/SiO 2 100 nm/Ti 5nm/Pt 15 nm sample in‐situ annealed in ultrahigh vacuum at 250 °C for 1 hour.