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Low‐Voltage UV‐Electroluminescence from ZnO‐Nanowire Array/p‐GaN Light‐Emitting Diodes
Author(s) -
Lupan Oleg,
Pauporté Thierry,
Viana Bruno
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201000611
Subject(s) - materials science , electroluminescence , optoelectronics , light emitting diode , diode , brightness , epitaxy , fabrication , nanowire , layer (electronics) , optics , nanotechnology , medicine , physics , alternative medicine , pathology
UV LEDs : The fabrication of an ITO/ZnO‐nanowires/p‐GaN/In‐Ga LED structure is reported with an active emitting layer made of high‐quality epitaxial ZnO grown electrochemically from a solution at low temperature (85 °C). A narrow ultra‐violet electroluminescence centered at 397 nm is obtained at room temperature starting at an applied forward bias of 4.4 V (see figure). The emission is of high brightness and stable at low applied voltages beyond 6 V.
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