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Intrinsic Topological Insulator Bi 2 Te 3 Thin Films on Si and Their Thickness Limit
Author(s) -
Li YaoYi,
Wang Guang,
Zhu XieGang,
Liu MinHao,
Ye Cun,
Chen Xi,
Wang YaYu,
He Ke,
Wang LiLi,
Ma XuCun,
Zhang HaiJun,
Dai Xi,
Fang Zhong,
Xie XinCheng,
Liu Ying,
Qi XiaoLiang,
Jia JinFeng,
Zhang ShouCheng,
Xue QiKun
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201000368
Subject(s) - topological insulator , molecular beam epitaxy , materials science , thin film , surface states , angle resolved photoemission spectroscopy , condensed matter physics , dirac (video compression format) , topology (electrical circuits) , optoelectronics , epitaxy , nanotechnology , surface (topology) , electronic structure , layer (electronics) , physics , quantum mechanics , geometry , mathematics , combinatorics , neutrino
High‐quality Bi 2 Te 3 films can be grown on Si by the state‐of‐art molecular beam epitaxy technique. In situ ARPES measurement reveals that the as‐grown films are intrinsic topological insulators and the single‐Dirac‐cone surface state develops at a thickness of two quintuple layers. The work opens a new avenue for engineering of topological materials based on well‐developed Si technology.