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Nonvolatile Memory: Majority Carrier Type Conversion with Floating Gates in Carbon Nanotube Transistors (Adv. Mater. 47/2009)
Author(s) -
Yu Woo Jong,
Kang Bo Ram,
Lee Il Ha,
Min YoSep,
Lee Young Hee
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200990178
Subject(s) - materials science , carbon nanotube field effect transistor , polarity (international relations) , carbon nanotube , transistor , trapping , nanotechnology , optoelectronics , non volatile memory , field effect transistor , nanotube , electrical engineering , voltage , chemistry , ecology , biochemistry , biology , cell , engineering
A charge trapping layer can serve not only for designing multilevel nonvolatile memory but also for reversible type conversion from p‐ to n‐type in carbon nanotube channels. Young Hee Lee and co‐workers demonstrate on p. 4821 that reversible conversion from p‐ to n‐type can be robustly realized in CNT field‐effect transistors by changing the polarity of trapped charges.