Nanowire‐Templated Epitaxial Growth: Nanowire‐Templated Lateral Epitaxial Growth of Low‐Dislocation Density Nonpolar a ‐Plane GaN on r ‐Plane Sapphire (Adv. Mater. 23/2009)

George Wang and co‐workers report on p. 2416 that low dislocation density a ‐plane GaN films can be grown by the coalescence of vertically‐aligned, single‐crystalline GaN nanowires on lattice‐mismatched r ‐plane sapphire. In this technique, shown by the artists' rendering on the inside cover, the nanowires facilitate dramatic strain relaxation in the suspended GaN film, leading to a large reduction in defects.