Premium
Nanowire‐Templated Epitaxial Growth: Nanowire‐Templated Lateral Epitaxial Growth of Low‐Dislocation Density Nonpolar a ‐Plane GaN on r ‐Plane Sapphire (Adv. Mater. 23/2009)
Author(s) -
Li Qiming,
Lin Yong,
Creighton J. Randall,
Figiel Jeffrey J.,
Wang George T.
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200990087
Subject(s) - materials science , nanowire , sapphire , epitaxy , dislocation , coalescence (physics) , optoelectronics , nanotechnology , condensed matter physics , crystallography , composite material , optics , layer (electronics) , laser , chemistry , physics , astrobiology
George Wang and co‐workers report on p. 2416 that low dislocation density a ‐plane GaN films can be grown by the coalescence of vertically‐aligned, single‐crystalline GaN nanowires on lattice‐mismatched r ‐plane sapphire. In this technique, shown by the artists' rendering on the inside cover, the nanowires facilitate dramatic strain relaxation in the suspended GaN film, leading to a large reduction in defects.