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Carbon Nanotube Field‐Effect Transistors: Towards Entire‐Carbon‐Nanotube Circuits: The Fabrication of Single‐Walled‐Carbon‐Nanotube Field‐Effect Transistors with Local Multiwalled‐Carbon‐Nanotube Interconnects (Adv. Mater. 13/2009)
Author(s) -
Liang Xuelei,
Wang Sheng,
Wei Xianlong,
Ding Li,
Zhu Yuzhen,
Zhang Zhiyong,
Chen Qing,
Li Yan,
Zhang Jin,
Peng LianMao
Publication year - 2009
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200990042
Subject(s) - materials science , carbon nanotube , carbon nanotube field effect transistor , nanotube , field effect transistor , nanotechnology , carbon nanotube quantum dot , transistor , fabrication , layer (electronics) , optoelectronics , electrical engineering , voltage , medicine , alternative medicine , engineering , pathology
Towards entire carbon nanotube (CNT) circuits: single‐walled CNTs serve as channels (lowest layer) and multi‐walled CNTs serve as interconnects (vertical vias and second/third layers). The polarity of the channel (p‐ or n‐type) was defined by metals with different working functions at the contact points (the yellow and green contacts in the lowest layer). More details on single‐walled CNT field‐effect transistors with multiwalled CNTs as local interconnects can be found in the article by Xuelei Liang, Lian‐Mao Peng, and co‐workers on p. 1339 .