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Ultraviolet Luminescent, High‐Effective‐Work‐Function LaTiO 3 ‐Doped Indium Oxide and Its Effects in Organic Optoelectronics
Author(s) -
Wang Ning,
Liu Xiaoxin,
Liu Xingyuan
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200903987
Subject(s) - materials science , indium , indium tin oxide , photoluminescence , doping , ultraviolet , luminescence , oxide , work function , optoelectronics , evaporation , nanotechnology , inorganic chemistry , thin film , layer (electronics) , metallurgy , physics , thermodynamics , chemistry
A novel n‐type transparent conducting oxide , an LaTiO 3 ‐doped indium oxide (ILTO) film, has been developed by double electron beam evaporation associated with an End Hall ion‐assisted deposition technique. ILTO shows room‐temperature UV photoluminescence (∼386 nm) and a thermally stable highly effective WF (∼5.2 eV) properties. ILTO is applied to replace traditional indium tin oxide and demonstrates positive effects on organic optoelectronics.