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Photocatalytic Cleavage of Self‐Assembled Organic Monolayers by UV‐Induced Charge Transfer from GaN Substrates
Author(s) -
Howgate John,
Schoell Sebastian J.,
Hoeb Marco,
Steins Wiebke,
Baur Barbara,
Hertrich Samira,
Nickel Bert,
Sharp Ian D.,
Stutzmann Martin,
Eickhoff Martin
Publication year - 2010
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200903756
Subject(s) - monolayer , materials science , photocatalysis , cleavage (geology) , charge (physics) , semiconductor , chemical physics , photochemistry , organic semiconductor , self assembled monolayer , fermi level , optoelectronics , chemical engineering , nanotechnology , catalysis , electron , organic chemistry , chemistry , physics , quantum mechanics , fracture (geology) , engineering , composite material
Charge transfer between GaN and organic self‐assembled monolayers is demonstrated. Alignment of charge‐transfer levels allows for photocatalytic cleavage of aliphatic chains on the semiconductor surface. By variation of the Fermi level within GaN and by comparison to SiC, it is shown that charge transfer can be suppressed and the stability of molecular monolayers can be enhanced in the absence of the appropriate energetic alignment.